Electron mobility in Si delta doped GaAs

Self-consistent calculation of transport properties in Si d doped GaAs quantum wells as a function of the temperature

The electronic structure of a delta-doped quantum well of Si in GaAs is studied at different temperatures. The calculation is carried out self-consistently in the framework of the Hartree approximation. The energy levels and the mobility trends are reported for various impurity densities. As a consequence, the temperature dependence of the mobility can be explained by means of the temperature v...

Millimeter and Sub-millimeter wave Response of Two-Dimensional Hot Electrons in double delta doped GaAs Quantum Well

Millimeter and sub-millimeter wave response of two-dimensional hot electrons in double delta doped GaAs quantum well is studied here incorporating deformation potential acoustic, polar optic, ionized background and remote impurity scatterings in the framework of heated drifted Fermi-Dirac distribution function. The inclusion of delta doping is found to enhance the two-dimensional electron densi...

Quantum- and transport electron mobility in the individual subbands of a two-dimensional electron gas in Si-S-doped GaAs

Multiquantum well structure with an average electron mobility of 4.0106 cm2/V s

We report a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Ten GaAs quantum wells 300-h; wide are symmetrically modulation doped using Si S doping at the center of 3600:A-wide Ab.,G%,As barriers. The low field mobility of each well is 4.0X lo6 cm/V s at a density of 6.4X 10” cme2 measured at 0.3 K either in the dar...

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires.

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation of these nanostructures into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowires and their influence on electron mobility and radiative efficiency are urgently required. Here, we investigate the electronic properties of...